III-nitride compound semiconductor light emitting device

Details III-nitride compound semiconductor light emitting device III-nitride compound semiconductor light emitting device

2004-07-02

2009-11-24

Weiss, Howard (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

C257SE29010, C257S098000, C372S046012, C438S700000

Reexamination Certificate

active

07622742

ABSTRACT:
The present invention relates to a III-nitride semiconductor light-emitting device having high external quantum efficiency, provides a III-nitride compound semiconductor light-emitting device including an active layer generating light by recombination of electrons and holes and containing gallium and nitrogen, an n-type Al(x)ln(y)Ga(1-x-y)N layer epitaxially grown before the active layer is grown, and an n-type electrode electrically contacting with the n-type Al(x)ln(y)Ga(1-x-y)N layer, in which the n-type Al(x)ln(y)Ga(1-x-y)N layer has a surface which is exposed by etching and includes a region for scribing and breaking the device and a region for contact with the n-type electrode, and the surface of the region for scribing and breaking the device is roughened, thereby it is possible to increase external quantum efficiency of the light-emitting device.

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