III-nitride device with improved layout geometry

Details III-nitride device with improved layout geometry III-nitride device with improved layout geometry

2006-12-13

2008-08-26

Dang, Phuc T (Department: 2892)

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

C257S081000, C438S602000

Reexamination Certificate

active

07417257

ABSTRACT:
A III-nitride power device for controlling high currents as an interdigitated electrode pattern for increasing device rating while decreasing device dimensions. Fingers of the interdigitated electrode pattern have tips with smaller dimensions than the remainder of the fingers. The tapered finger design balances current flow in the electrode fingers to reduce device resistance while permitting a more compact construction.

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