Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure
Reexamination Certificate
2008-08-11
2011-10-25
Huynh, Andy (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
C257S022000, C257S103000, C257S189000, C257SE33001, C257SE33030, C257SE33033
Reexamination Certificate
active
08044409
ABSTRACT:
A semiconductor structure includes a substrate and a conductive carrier-tunneling layer over and contacting the substrate. The conductive carrier-tunneling layer includes first group-III nitride (III-nitride) layers having a first bandgap, wherein the first III-nitride layers have a thickness less than about 5 nm; and second III-nitride layers having a second bandgap lower than the first bandgap, wherein the first III-nitride layers and the second III-nitride layers are stacked in an alternating pattern. The semiconductor structure is free from a III-nitride layer between the substrate and the conductive carrier-tunneling layer. The semiconductor structure further includes an active layer over the conductive carrier-tunneling layer.
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Chen Ding-Yuan
Chiou Wen-Chih
Yu Chen-Hua
Yu Chia-Lin
Huynh Andy
Slater & Matsil L.L.P.
Taiwan Semiconductor Manufacturing Company , Ltd.
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