III-nitride compound semiconductor light emitting device

Details III-nitride compound semiconductor light emitting device III-nitride compound semiconductor light emitting device

2011-04-12

2011-04-12

Vu, Hung (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

With particular semiconductor material

C257S098000, C257SE33001, C257SE33067, C257SE33074

Reexamination Certificate

active

07923749

ABSTRACT:
The present invention relates a III-nitride compound semiconductor light emitting device in which a first layer composed of a carbon-containing compound layer, such as an n-type or p-type silicon carbide (SiC), silicon carbon nitride (SiCN) or carbon nitride layer (CN) layer, is formed on the p-type III-nitride semiconductor layer of the existing III-nitride semiconductor light emitting device, and a second layer composed of a III-nitride semiconductor layer with a given thickness is formed on the first layer.

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