GAN group crystal base member having low dislocation...
GaN light emitting diode with conductive outer layer
GaN-based compound semiconductor device
GaN-based field effect transistor of a normally-off type
GaN-based HFET having a surface-leakage reducing cap layer
GaN-based high electron mobility transistor
GaN-based high electron mobility transistor (HEMT) with an...
GaN-based nitric oxide sensors and methods of making and...
GaN-based semiconductor device
GaN-type enhancement MOSFET using hetero structure
GaN-type light emitting device formed on a silicon substrate
GeSOI transistor with low junction current and low junction...
Graded bandgap single-crystal emitter heterojunction bipolar tra
Graded-base-bandgap bipolar transistor having a...
Group 3-5 nitride semiconductor multilayer substrate, method...
Group II-VI compound semiconductor light emitting devices and an
Group III nitride based FETs and HEMTs with reduced trapping...
Group III nitride compound semiconductor device
Group III nitride compound semiconductor device
Group III nitride compound semiconductor device