Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – Field effect transistor
Reexamination Certificate
2007-05-22
2007-05-22
Pert, Evan (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Heterojunction device
Field effect transistor
C257S019000, C257S347000, C257S374000, C257S410000, C257S092000, C257S344000
Reexamination Certificate
active
11110234
ABSTRACT:
A semiconductor device (101) is provided herein which comprises a substrate (103) comprising germanium. The substrate has source (107) and drain (109) regions defined therein. A barrier layer (111) comprising a first material that has a higher bandgap (Eg) than germanium is disposed at the boundary of at least one of said source and drain regions. At least one of the source and drain regions comprises germanium.
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Meuris, M. et al.; “Germanium Deep-Sub Micron PMOS Transistors With Etched Tan Metal Gate on a High-K Dielectric, Fabricated in a 200MM Prototyping Line”; IMEC, Kapeldreef 75, B-3001 Leuven, Belgium; Lam Research Corp., Fremont, CA 94538, USA, Umicore, B-2250 Olen, Belgium; and KU Leuven, Kasteelpark Arenberg 10, B-3001 Leuven, Belgium; Electrochemical Society Proceedings; vol. 2004-07; pp. 693-700.
Goktepeli Sinan
Liu Chun-Li
Orlowski Marius
Erdem Fazli
Fortkort John A.
Fortkort & Houston P.C.
Freescale Semiconductor Inc.
Pert Evan
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