Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – Bipolar transistor
Reexamination Certificate
2007-01-30
2007-01-30
Owens, Douglas W. (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Heterojunction device
Bipolar transistor
C257S198000, C257S199000, C257S200000
Reexamination Certificate
active
10283705
ABSTRACT:
A bipolar transistor structure and process technology is described incorporating a emitter, a base, and a collector, with most of the intrinsic base adjacent the collector having a graded energy bandgap and a layer of the intrinsic base adjacent the emitter having a substantially constant energy bandgap. The invention has a smaller base transit time than a conventional graded-base-bandgap bipolar transistor.
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Gebremariam Samuel A
Morris Daniel P.
Owens Douglas W.
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