GaN-type light emitting device formed on a silicon substrate

Details GaN-type light emitting device formed on a silicon substrate GaN-type light emitting device formed on a silicon substrate

1995-08-21

1998-11-17

Guay, John

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

With lattice constant mismatch

257 76, 257 96, 257 97, 257103, H01L 3300, H01L 2926

Patent

active

058380299

ABSTRACT:
A light emitting device employing gallium nitride type compound semiconductor which generates no crystal defect, dislocation and can be separated easily to chips by cleavage and a method for producing the same are provided As a substrate on which gallium nitride type compound semiconductor layers are stacked, a gallium nitride type compound semiconductor substrate, a single-crystal silicon, a group II-VI compound semiconductor substrate, or a group III-V compound semiconductor substrate is employed.

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patent: 4890293 (1989-12-01), Taneya et al.
patent: 5192987 (1993-03-01), Khan et al.
patent: 5210767 (1993-05-01), Arimoto et al.
patent: 5218613 (1993-06-01), Serreze
patent: 5587014 (1996-12-01), Iyechika et al.
Abstract of Japanese Patent Publ. No. 2-129915 dated May 7, 1992.

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