GaN-based semiconductor device
GaN-type enhancement MOSFET using hetero structure
GaN-type light emitting device formed on a silicon substrate
GeSOI transistor with low junction current and low junction...
Graded bandgap single-crystal emitter heterojunction bipolar tra
Graded-base-bandgap bipolar transistor having a...
Group 3-5 nitride semiconductor multilayer substrate, method...
Group II-VI compound semiconductor light emitting devices and an
Group III nitride based FETs and HEMTs with reduced trapping...
Group III nitride compound semiconductor device
Group III nitride compound semiconductor device
Group III nitride compound semiconductor device
Group III nitride compound semiconductor device and method...
Group III nitride compound semiconductor light-emitting element
Group III nitride compound semiconductor light-emitting element
Group III nitride field effect transistors (FETS) capable of...
Group III nitride semiconductor device
Group III nitride semiconductor device and its method of...
Group III nitride semiconductor device of field effect...
Group III nitride semiconductor light emitting device