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Four vertically stacked memory layers in a non-volatile...

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
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Four-bit FinFET NVRAM memory device

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
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Four-terminal system for reading the state of a phase qubit

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
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Fowler-Nordheim block alterable EEPROM memory cell

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
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FRAM and method of fabricating the same

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
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Frame shutter pixel with an isolated storage node

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
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Free layer/capping layer for high performance MRAM MTJ

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
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French-type semiconductor memory device with enhanced trench cap

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
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Fringing field induced localized charge trapping memory

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
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Fringing field induced localized charge trapping memory

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
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Front stage process of a fully depleted silicon-on-insulator...

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
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Frontside contact on silicon-on-insulator substrate

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
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Full CMOS SRAM cell comprising Vcc and Vss buses on both sides o

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
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Full-featured EEPROM

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
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Fully CMOS-type SRAM device with grounding wire having contact h

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
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Fully depleted lateral transistor

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
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Fully depleted silicon on insulator semiconductor device and...

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
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Fully depleted silicon-on-insulator CMOS logic

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
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Fully depleted silicon-on-insulator CMOS logic

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
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Fully depleted SOI device with tungsten damascene contacts...

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
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