Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2008-05-20
2008-05-20
Prenty, Mark V. (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S326000, C257S900000
Reexamination Certificate
active
07375394
ABSTRACT:
The present invention includes a semiconductor layer formed over an insulation layer and a substrate. Doped regions are formed in a portion of the semiconductor layer. A gate dielectric and a gate are respectively formed over the semiconductor layer. The arrangement of the gate sidewall and semiconductor layer surface is substantially orthogonal, multi-portion dielectric layer is formed on the gate and a portion of the silicon layer. Charge trapping dielectrics are attached on the multi-portion dielectric layer acting as carrier trapping structure. The gate-to-source/drain non-overlapped implantation is capable of storing multi-bits per transistor.
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Applied Intellectual Properties Co., Ltd.
Kusner & Jaffe
Prenty Mark V.
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