Four-bit FinFET NVRAM memory device

Details Four-bit FinFET NVRAM memory device Four-bit FinFET NVRAM memory device

2006-08-15

2006-08-15

Booth, Richard A. (Department: 2812)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C438S954000, C438S283000

Reexamination Certificate

active

07091551

ABSTRACT:
A four-bit FinFET memory cell, method of fabricating four-bit FinFET memory cell and an NVRAM formed of four-bit FINFET memory cells. The four-bit memory cell including two charge storage regions in opposite ends of a dielectric layer on a first sidewall of a fin of a FinFET and two additional charge storage regions in opposite ends of a dielectric layer on a second sidewall of the fin of the FinFET, the first and second sidewalls being opposite one another.

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Alberts et al.; Multi-Bit Fet EAROM Cell; IBM Technical Disclosure Bulletin, vol. 24, No. 7A, Dec. 1981; pp. 3311-3314.

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