Fully depleted lateral transistor

Details Fully depleted lateral transistor Fully depleted lateral transistor

1994-02-23

1996-12-10

Loke, Steven H.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257343, 257491, 257492, 257493, H01L 2976, H01L 2994, H01L 2358

Patent

active

055833659

ABSTRACT:
The breakdown characteristics of a lateral transistor integrated in an epitaxial layer of a first type of conductivity grown on a substrate of an opposite type of conductivity and comprising a drain region formed in said epitaxial layer, are markedly improved without recurring to critical adjustments of physical parameters of the integrated structure by forming a buried region having the same type of conductivity of the substrate and a slightly higher level of doping at the interface between the epitaxial layer and the substrate in a zone laying beneath the drain region of the transistor.

REFERENCES:
patent: 4300150 (1981-11-01), Colak
patent: 4628341 (1986-12-01), Thomas
patent: 4989058 (1991-01-01), Colak et al.
Thin Layer High-Voltage Devices (Resurf Devices) by J. A. Appels, et al., Philips J. Res. 35, 1-13, 1980.

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