Free layer/capping layer for high performance MRAM MTJ

Details Free layer/capping layer for high performance MRAM MTJ Free layer/capping layer for high performance MRAM MTJ

2009-01-14

2010-10-05

Dang, Trung (Department: 2892)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257SE21665, C257SE29167, C438S003000

Reexamination Certificate

active

07808027

ABSTRACT:
An MTJ MRAM cell and its method of formation are described. The cell includes a composite free layer having the general form (Ni88Fe12)1-xCo100x—Ni92Fe8with x between 0.05 and 0.1 that provides low magnetization and negative magnetostriction. The magnetostriction can be tuned to a low value by a multilayer capping layer that includes a positive magnetostriction layer of NiFeHf(15%). When this cell forms an MRAM array, it contributes to a TMR≧26%, a TMR/Rp—cov≧15.5 and a high AQF (array quality factor) for write operations.

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