Fowler-Nordheim block alterable EEPROM memory cell

Details Fowler-Nordheim block alterable EEPROM memory cell Fowler-Nordheim block alterable EEPROM memory cell

2005-08-23

2005-08-23

Huynh, Andy (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S316000, C257S318000, C257S321000, C365S185010

Reexamination Certificate

active

06933557

ABSTRACT:
A block alterable memory cell has a select control gate extending from a floating gate region to a drain region. The block alterable memory cell comprises a substrate layer that further includes a source implant region, an active region, a floating gate transistor region, and a drain implant region. A tunnel oxide layer overlies the substrate layer and is deposited to a thickness of approximately 70 angstroms. The select control gate comprises a first oxide layer overlying the tunnel oxide layer, an inter poly layer overlying over the first oxide layer, and a second layer extending over the floating gate transistor region and the active region to an edge of the drain implant region.

REFERENCES:
patent: 4783766 (1988-11-01), Samachisa et al.
patent: 4853895 (1989-08-01), Mitchell et al.
patent: 4949309 (1990-08-01), Rao
patent: 5066992 (1991-11-01), Wu et al.
patent: 5225700 (1993-07-01), Smayling
patent: 5329487 (1994-07-01), Gupta et al.
patent: 5355347 (1994-10-01), Cioaca
patent: 5397726 (1995-03-01), Bergemont
patent: 5523980 (1996-06-01), Sakui et al.
patent: 5793079 (1998-08-01), Georgescu et al.
patent: 5811852 (1998-09-01), Ling
patent: 6160287 (2000-12-01), Chang
patent: 6236594 (2001-05-01), Kwon
patent: 6420753 (2002-07-01), Hoang
patent: 6468863 (2002-10-01), Hsieh et al.
patent: 6486032 (2002-11-01), Lin et al.
patent: 6522580 (2003-02-01), Chen et al.
patent: 6563733 (2003-05-01), Chang et al.
patent: 6567313 (2003-05-01), Tanaka et al.
patent: 6597047 (2003-07-01), Arai et al.
patent: 2002/0135013 (2002-09-01), Chiu

Affiliated with

Also associated with

Rating

Fowler-Nordheim block alterable EEPROM memory cell does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Fowler-Nordheim block alterable EEPROM memory cell, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Fowler-Nordheim block alterable EEPROM memory cell will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3511095