French-type semiconductor memory device with enhanced trench cap

Details French-type semiconductor memory device with enhanced trench cap French-type semiconductor memory device with enhanced trench cap

1992-05-15

1996-10-08

Limanek, Robert P.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257303, 257382, H01L 27108

Patent

active

055634338

ABSTRACT:
A type of semiconductor device with a configuration characterized by the fact that an electroconductive film (90) is formed beforehand in connection to step (54a) of insulating film (54), and an electroconductive layer (63) with step from the aforementioned electroconductive film is coated to form the side contact of the memory cell.
Even in the case when breakage takes place in electroconductive layer (63), the electrical conduction is still maintained via substrate electroconductive film (90), and no wire breakage, in effect, takes place. In addition, it is possible to form the pattern for the aforementioned electroconductive layer by, for instance, etching back method without applying a special mask; hence, the manufacturing process is simplified.

REFERENCES:
patent: 4999689 (1991-03-01), Iguchi
patent: 5013679 (1991-05-01), Kumagai et al.
patent: 5075248 (1991-12-01), Yoon et al.

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