LandOfFree - US Patents - Listing for Active solid-state devices (e.g., transistors, solid-state diode,Bipolar transistor structure,With enlarged emitter area

Active solid-state devices (e.g. – transistors – solid-state diode – Bipolar transistor structure – With enlarged emitter area

Redundant interconnect high current bipolar device

Active solid-state devices (e.g. – transistors – solid-state diode – Bipolar transistor structure – With enlarged emitter area

Redundant interconnect high current bipolar device and...

Active solid-state devices (e.g. – transistors – solid-state diode – Bipolar transistor structure – With enlarged emitter area

RF power transistor

Active solid-state devices (e.g. – transistors – solid-state diode – Bipolar transistor structure – With enlarged emitter area

RF power transistor having improved stability and gain

Active solid-state devices (e.g. – transistors – solid-state diode – Bipolar transistor structure – With enlarged emitter area

Semiconductor apparatus and method of manufacturing the same

Active solid-state devices (e.g. – transistors – solid-state diode – Bipolar transistor structure – With enlarged emitter area

Semiconductor chips encapsulated within a preformed...

Active solid-state devices (e.g. – transistors – solid-state diode – Bipolar transistor structure – With enlarged emitter area

Semiconductor device

Active solid-state devices (e.g. – transistors – solid-state diode – Bipolar transistor structure – With enlarged emitter area

Semiconductor device

Active solid-state devices (e.g. – transistors – solid-state diode – Bipolar transistor structure – With enlarged emitter area

Semiconductor device

Active solid-state devices (e.g. – transistors – solid-state diode – Bipolar transistor structure – With enlarged emitter area

Semiconductor device

Active solid-state devices (e.g. – transistors – solid-state diode – Bipolar transistor structure – With enlarged emitter area

Semiconductor device and method of manufacturing the same

Active solid-state devices (e.g. – transistors – solid-state diode – Bipolar transistor structure – With enlarged emitter area

Semiconductor device comprising an integrated circuit having a v

Active solid-state devices (e.g. – transistors – solid-state diode – Bipolar transistor structure – With enlarged emitter area

Semiconductor device having spaces and having reduced parasitic

Active solid-state devices (e.g. – transistors – solid-state diode – Bipolar transistor structure – With enlarged emitter area

Semiconductor device with a semiconductor element provided in a

Active solid-state devices (e.g. – transistors – solid-state diode – Bipolar transistor structure – With enlarged emitter area

Semiconductor device with special emitter connection

Active solid-state devices (e.g. – transistors – solid-state diode – Bipolar transistor structure – With enlarged emitter area

Semiconductor elements for semiconductor device

Active solid-state devices (e.g. – transistors – solid-state diode – Bipolar transistor structure – With enlarged emitter area

Strobe light control circuit and IGBT device

Active solid-state devices (e.g. – transistors – solid-state diode – Bipolar transistor structure – With enlarged emitter area

Termal shunt stabilization of multiple part heterojunction bipol

Active solid-state devices (e.g. – transistors – solid-state diode – Bipolar transistor structure – With enlarged emitter area

Thermally balanced radio frequency power transistor