Active solid-state devices (e.g. – transistors – solid-state diode – Bipolar transistor structure – With enlarged emitter area
Patent
1997-07-03
2000-04-04
Loke, Steven H.
Active solid-state devices (e.g., transistors, solid-state diode
Bipolar transistor structure
With enlarged emitter area
257587, 257578, H01L 27082, H01L 27102, H01L 2970
Patent
active
060464933
ABSTRACT:
A semiconductor device provided with a semiconductor substrate with a bipolar transistor having a collector region of a first conductivity type, a base region adjoining the collector region and of a second conductivity type opposed to the first, and an elongate emitter region of the first conductivity type adjoining the base region; the collector region, the base region, and the emitter region being provided with conductor tracks which are connected to conductive connection surfaces. The conductor track on the elongate emitter region of the semiconductor device has a connection to a connection surface for a further electrical connection at each of the two ends of the emitter region. The emitter region may be made longer in this manner because the length of the emitter region is effectively halved by the connections at the two ends. Consequently, charge carriers need be transported over no more than at most half the emitter length. The semiconductor device according to the invention is thus capable of supplying high powers because the charge transport is not limited by charge transport through the conductor track on the elongate emitter region.
REFERENCES:
patent: 4656496 (1987-04-01), Widlar
patent: 5414296 (1995-05-01), Bartlow
patent: 5569952 (1996-10-01), Dekker et al.
Dekker Ronald
Koster Ronald
Loke Steven H.
U.S. Philips Corporation
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