Active solid-state devices (e.g. – transistors – solid-state diode – Bipolar transistor structure – With enlarged emitter area
Patent
1995-08-30
1998-03-31
Munson, Gene M.
Active solid-state devices (e.g., transistors, solid-state diode
Bipolar transistor structure
With enlarged emitter area
257197, 257586, 257587, 257593, 257745, 257728, 257796, H01L 29201, H01L 27082, H01L 2334
Patent
active
057341931
ABSTRACT:
Structure and fabrication details are disclosed for AlGaAs/GaAs microwave HBTs having improved thermal stability during high power operation. The use of a thermal shunt joining emitter contacts of a multi-emitter HBT is shown to improve this thermal stability and eliminate "current-crush" effects. A significant reduction in thermal resistance of the disclosed devices is also achieved by spreading the generated heat over a large substrate area using thermal lens techniques in the thermal shunt. These improvements achieve thermally stable operation of AlGaAs/GaAs HBTs up to their electronic limitations. A power density of 10 mW/.mu.m2 of emitter area is achieved with 0.6 W CW output power and 60% power-added efficiency at 10 GHz. The thermal stabilization technique is applicable to other bipolar transistors including silicon, germanium, and indium phosphide devices. The disclosed fabrication sequence employs an improved two-step polyimide electrical isolation planarization sequence in preparation for fabrication of the thermal shunting element.
REFERENCES:
patent: 4389557 (1983-06-01), Devenyi et al.
patent: 4939562 (1990-07-01), Adlerstein
patent: 5026655 (1991-06-01), Ohata
patent: 5066926 (1991-11-01), Ramachandran et al.
patent: 5084750 (1992-01-01), Adlerstein
patent: 5145809 (1992-09-01), Walker
patent: 5185274 (1993-02-01), Chang et al.
patent: 5196359 (1993-03-01), Shih et al.
patent: 5202752 (1993-04-01), Honjo
patent: 5296733 (1994-03-01), Kusano et al.
N.L.Wang, N.H. Sheng, M.F. Chang, W.J. Ho, G.J. Sullivan, E.A. Sovero, J.A. Higgins, and P.M. Asbeck, "Ultrahigh Power Efficiency Operation of Common-Emitter and Common-Base HBTS at 10 GHz," IEEE Trans, Microwave Theory and Tech., vol. 38, pp. 1381-1389, 1990.
P. Bartusiak, T. Henderson, T.Kim, A. Khatibzadeh, and B. Bayraktaroglu "High Efficiency Ku-Band HBT Amplifier with 1 W CW Output Power," Electronics Lett., vol. 27, pp. 2189-2190, 1991.
J.A. Higgins, "GaAs Hetrojunction Bipolar Transistors: A Second Generation Microwave Power Amplifier Transistor," Microwave J., pp. 176-194, 1991.
M.A. Khatibzadeh, B. Bayraktaroglu, and T. Kim, "12 W Monolithic X-Band HBT Power Amplifier," IEEE MTT-S Microwave and Millimeter Wave Monolithic Circuits Symp. Techn. Dig., pp. 47-50, 1992.
P. Bartusiak, T. Henderson, T. Kim, and B.Bayraktaroglu, "High-Efficiency Ku-Band HBT MMIC Power Amplifier," IEEE Electron Dev. Lett., vol. 13, pp. 584-586, 1992.
L.L. Liou, B. Bayraktaroglu, and C.I. Huang, "Thermal Stability Analysis of Multiple Emitter Finger Microwave AlGaAs/GaAs Hetrojunction Bipolar Transistors," IEEE MTT-S Microwave Symp. Tech. Dig., pp. 281-284, 1993.
G.B. Gao, M.S. Unlu, H. Morkoc, and D.L. Blackburn, "Emitter Ballasting Resistor Design for, and Current Handling Capability of AlGaAs/GaAs power Hetrojunction Bipolar Transistors," IEEE Trans. Electron Dev., vol. 38, pp. 185-196, 1991.
B. Bayraktaroglu, J. Barrette, R. Fitch, L. Kehias, C.I., Huang, R. Neidhard, and R. Scherer, "Thermally-Stable AlGaAs Microwave Power HBTs," Presented at 1993 Device Research Conference, Santa Barbara, CA.
G.C. Desalvo, W.F. Tseng, and J. Comas, "Etch Rates and Selectivities of Citric Acid/Hydrogen Peroxide on GaAs, Al.sub.0.3 Ga.sub.0.7 As, In.sub.0.2 Ga.sub.0.8 As, In.sub.0.53 Ga.sub.0.47 As, In.sub.0.52 Al.sub.0.48 As and InP," J. Electrochem, Soc., vol.139, pp. 831-835, 1992.
Keh-Chung Wang, P.M. Asbeck, Mau-Chung F. Chang, D. L. Miller, G.J. Sullivan, J.J. Corcoran, and T. Hornak, "Heating Effects on the Accuracy of HBT Voltage Comparactors," IEEE Transactions on Electron Devices, vol. ED-34, No. 8, pp. 1729-1735, Aug. 87.
H. Sato, M. Minguchi, K. Sakuno, M. Akagi, M. Hasegowa, J.K. Twynan, K.M. Yamanura "Bump Heat Sink Technology--A Novel Assembly Technique Suitable for Power HBTs" Proceedings of the Gallium Arsenide Integrated Circuit Symposium, Mar. 1993K AIEEE0-7803-1393-3193.
B. Bayraktaroglu, J. Barrette, L. Kehios, C. I. Huang, R. Fitch, R. Neidlord and R. Scherer, "Very High Power Density C.W. Operation of Ga/As/AlGaAs Microwave Hetrojunction Bipolar Transistor", IEEE Electron Device Letters V14No.10 Oct. 1993.
B. Bayraktaroglu, R. Fitch, J. Barvette, R. Scherer, L. Kehias, and C. I. Huang, "Design and Fabrication of Thermally-Stable AlGaAs/Ga AS Microwave Power HBT's." Proceedings of IEEE/Cornell University Conference on Advance Concepts in High Speed Semiconductor Devices and Circuits Conference, Cornell University, N.Y., Aug. 1993.
M. Adlerstein, M. Zaitlin, G. Flynn, W. Hoke, J. Huang, G. Jackson, P. Lemonias, R. Majorone, and E. Tong, "High Power Density Pulsed X-Band Hetrojunction Bipolar Transistors," Electron. Lett., vol. 27, pp. 148-149, 91.
L.L. Liou, B. Bayraktaroglu, C.I. Huang, "Thermal Stability Analysis of Multiple Emitter Finger Microwave Al Ga As/Ga As Hetrojunction Bipolar Transistors," IEEE MTT-S--Digest, 1993.
Bayraktaroglu Burhan
Huang Chern I.
Liou Lee L.
Hollins Gerald B.
Kundert Thomas L.
Munson Gene M.
The United States of America as represented by the Secretary of
LandOfFree
Termal shunt stabilization of multiple part heterojunction bipol does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Termal shunt stabilization of multiple part heterojunction bipol, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Termal shunt stabilization of multiple part heterojunction bipol will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-54365