Active solid-state devices (e.g. – transistors – solid-state diode – Bipolar transistor structure – With enlarged emitter area
Patent
1994-08-03
1996-07-23
Brown, Peter Toby
Active solid-state devices (e.g., transistors, solid-state diode
Bipolar transistor structure
With enlarged emitter area
257587, 257760, 257786, H01L 2348
Patent
active
055392431
ABSTRACT:
A semiconductor device containing a first electrode formed under an interlayer insulator film and a second electrode formed on or over the interlayer insulator film. The first electrode is connected to an active region formed at a semiconductor substrate. The second electrode acts as a bonding pad and is connected to the first electrode through the interlayer insulator film. Between the second electrode and the substrate, there is a capacitance-reduction structure composed of an insulator layer having a plurality of hollow spaces arranged at intervals. Due to the capacitance-reduction structure, the dielectric material existing between the second electrode and the substrate contains the hollow spaces therein, resulting in a reduced parasitic capacitance produced using the second electrode, substrate and the dielectric material.
REFERENCES:
patent: 5189505 (1993-02-01), Bartelink
S. M. Sze, Semiconductor Devices/Physics & Technology 1986, p. 344.
Translation of Japan Kokai Publication #0074731 (Mar, 1989) to Okuzumi, 13 pages.
Brown Peter Toby
NEC Corporation
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