Thermally balanced radio frequency power transistor

Details Thermally balanced radio frequency power transistor Thermally balanced radio frequency power transistor

1996-10-02

1998-09-08

Thomas, Tom

Active solid-state devices (e.g., transistors, solid-state diode

Bipolar transistor structure

With enlarged emitter area

257579, 257582, 257587, H01L 27102

Patent

active

058048677

ABSTRACT:
An RF power transistor having improved thermal balance characteristics includes a first emitter electrode and a base electrode formed on a silicon die, each having a multiplicity of parallel electrode fingers. A second emitter electrode is formed over the base electrode, and is electrically connected to the first emitter electrode. Ballast resistors are formed in a substantially evenly spaced manner on each side the silicon die, in series with at least some of the electrode fingers of the first emitter electrode and in series of at least some of the electrode fingers of the second emitter electrode.

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patent: 5023189 (1991-06-01), Bartlow
patent: 5107326 (1992-04-01), Hargasser
patent: 5210439 (1993-05-01), Conzelmann et al.
patent: 5317176 (1994-05-01), Schaper et al.
patent: 5488252 (1996-01-01), Johansson et al.

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