Semiconductor device and method of manufacturing the same

Details Semiconductor device and method of manufacturing the same Semiconductor device and method of manufacturing the same

2008-06-06

2011-12-13

Tran, Minh-Loan T (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Bipolar transistor structure

With enlarged emitter area

C257S584000, C257S621000, C257SE29114, C257SE23011

Reexamination Certificate

active

08076755

ABSTRACT:
Disclosed is a semiconductor device in which emitter pad electrodes connected to an active region, collector and base pad electrodes are formed on a surface of a semiconductor substrate. Furthermore, on a back surface of the semiconductor substrate, a backside electrode is formed. Moreover, the emitter pad electrodes connected to a grounding potential are connected to the backside electrode through feedthrough electrodes penetrating the semiconductor substrate in a thickness direction.

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