Semiconductor device

Details Semiconductor device Semiconductor device

2011-08-30

2011-08-30

Lee, Eugene (Department: 2891)

Active solid-state devices (e.g., transistors, solid-state diode

Bipolar transistor structure

With enlarged emitter area

C257S273000, C257S567000, C257S579000, C257S590000, C257SE29027, C257SE29197

Reexamination Certificate

active

08008746

ABSTRACT:
An n+-emitter layer arranged under an emitter electrode is formed of convex portions arranged at predetermined intervals and a main body coupled to the convex portions. A convex portion region is in contact with the emitter electrode, and a p+-layer doped more heavily than a p-base layer is arranged at least below the emitter layer. In a power transistor of a lateral structure, a latch-up immunity of a parasitic thyristor can be improved, and a turn-off time can be reduced.

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