Redundant interconnect high current bipolar device and...

Details Redundant interconnect high current bipolar device and... Redundant interconnect high current bipolar device and...

2006-02-14

2006-02-14

Nguyen, Cuong (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Bipolar transistor structure

With enlarged emitter area

C257S587000, C257S592000

Reexamination Certificate

active

06998699

ABSTRACT:
A bipolar transistor having a base contact surrounded by an emitter contact. A plurality of wires extending from the base contact and the emitter contact of the bipolar transistor, wherein the wires of the base contact are stacked higher than the wires of the emitter contact. A device comprising a plurality of these bipolar transistors, wherein at least one side of each emitter contact abuts each adjacent transistor. Increasing the wiring stack of each row of transistors in the device as the distance between the row and the current input increases.

REFERENCES:
patent: H842 (1990-11-01), Ochs
patent: 5508552 (1996-04-01), Iranmanesh et al.
patent: 5519241 (1996-05-01), Oppermann et al.
patent: 5523614 (1996-06-01), Hashimoto
patent: 5637901 (1997-06-01), Beigel et al.
patent: 5850101 (1998-12-01), Iranmanesh
patent: 6020636 (2000-02-01), Adishian
patent: 54-128292 (1979-10-01), None

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