RF power transistor having improved stability and gain

Details RF power transistor having improved stability and gain RF power transistor having improved stability and gain

1996-11-25

1998-10-13

Saadat, Mahshid D.

Active solid-state devices (e.g., transistors, solid-state diode

Bipolar transistor structure

With enlarged emitter area

257577, 257578, 257579, 257580, 438329, 438330, H01L 27082, H01L 27102, H01L 2970, H01L 3111

Patent

active

058216022

ABSTRACT:
Increased gain and improved stability are realized in using resistive emitter ballasting by including integrated capacitive elements in parallel with the resistive elements in the emitter circuit. A feature of the invention is an integrated capacitor structure having a small surface area to minimize parasitic capacitance, whereby resistor and capacitor surface areas of 100 square micrometers or less are obtained. Another feature of the invention is the use of a high dielectric material in realizing a resistor-capacitor impedance zero at a frequency much lower than the operating frequency of the transistor. For an operating frequency of 2 GHz and resistor values of 50-250 ohms, capacitance required is 3 pF or greater. Another feature of the invention is a method of fabricating the integrated resistive-capacitive element in either a low temperature process or a high temperature process which minimizes capacitor leakage when using a thin high dielectric insulative material between capacitor plates.

REFERENCES:
patent: 5329156 (1994-07-01), Bartlow
patent: 5374844 (1994-12-01), Moyer
patent: 5420460 (1995-05-01), Massingill
patent: 5455449 (1995-10-01), Inn
patent: 5488252 (1996-01-01), Johansson et al.
patent: 5567964 (1996-10-01), Kashihara et al.
patent: 5629648 (1997-05-01), Pratt
patent: 5684326 (1997-11-01), Johansson et al.

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