Active solid-state devices (e.g. – transistors – solid-state diode – Bipolar transistor structure – With enlarged emitter area
Reexamination Certificate
2005-04-12
2005-04-12
Flynn, Nathan J. (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Bipolar transistor structure
With enlarged emitter area
C257S582000, C257S585000, C257S583000, C257S586000, C257S587000, C257S675000, C257S676000
Reexamination Certificate
active
06879024
ABSTRACT:
As external connection terminals for an emitter electrode (12) of an IGBT chip, a first emitter terminal (151) for electrically connecting a light emitter in a strobe light control circuit to the emitter electrode (12) and a second emitter terminal (152) for connecting a drive circuit for driving an IGBT device to the emitter electrode (12) are provided. The first emitter terminal (151) and the second emitter terminal (152) are individually connected to the emitter terminal (12) by wire bonding.
REFERENCES:
patent: 3814994 (1974-06-01), Wagner
patent: 5038080 (1991-08-01), Hirata
patent: 5053802 (1991-10-01), Hirata
patent: 5532555 (1996-07-01), Yamada
patent: 5640620 (1997-06-01), Matsui
patent: 6069401 (2000-05-01), Nakamura et al.
patent: 6081076 (2000-06-01), Ogawa
patent: 6448645 (2002-09-01), Kimura et al.
patent: 20030062608 (2003-04-01), Hamachi
patent: 8-162631 (1996-06-01), None
Erdem Fazli
Flynn Nathan J.
Renesas Technology Corp.
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