Using multiple status bits per cell for handling power...

Using negative gate erase voltage to simultaneously erase...

Using one memory to supply addresses to an associated memory dur

Using one memory to supply addresses to an associated memory dur

Using permanent magnets in MRAM to assist write operation

Using redundant memory for extra features

Using redundant memory for extra features

Using redundant memory for extra features

Utilization of memory-diode which may have each of a...

Utilizing an ACPI to maintain data stored in a DRAM

UV erasable EPROM with UV transparent silicon oxynitride coating

V-Groove semiconductor memory device

V.sub.pp only scalable EEPROM memory cell having transistors wit

Variable bitline precharge voltage sensing technique for DRAM st

Variable boost voltage row driver circuit and method, and...

Variable capacitances for memory cells within a cell group

Variable capacity semiconductor memory device

Variable clamped memory cell

Variable column redundancy region boundaries in SRAM

Variable comparison voltage generation apparatus for generating