Utilization of memory-diode which may have each of a...

Static information storage and retrieval – Systems using particular element – Semiconductive

Reexamination Certificate

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C365S184000, C365S243000

Reexamination Certificate

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07450416

ABSTRACT:
The present invention is a method of undertaking a procedure on a memory-diode, wherein a memory-diode is provided which is programmable so as to have each of a plurality of different threshold voltages. A reading of the state of the memory-diode indicates the so determined threshold voltage of the memory-diode.

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