Variable column redundancy region boundaries in SRAM

Details Variable column redundancy region boundaries in SRAM Variable column redundancy region boundaries in SRAM

2005-09-13

2005-09-13

Dinh, Son T. (Department: 2824)

Static information storage and retrieval

Read/write circuit

Bad bit

C365S230060, C711S118000

Reexamination Certificate

active

06944075

ABSTRACT:
A method of assigning bits to redundant regions for variable bit redundancy region boundaries in a compliable memory such as a 1-port SRAM is provided. Methods include allocating bits between the redundant regions in nearly equal proportions while minimizing the amount of chip real estate consumed by the memory. Methods also includes allocating bits in equal portions between redundant regions while occupying slightly more memory chip real estate. Methods also allocate bits into redundant regions with a simplified procedure which may or may not allocate bits into the redundant regions in equal proportions. All of the methods allow the total number of memory bits in the complied memory to be re-defined while maintaining the same allocation characteristics for each method. Accordingly, the methods allow efficient use of redundant memory bits while also conserving chip real estate or offering simplified allocation steps.

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