Static information storage and retrieval – Read/write circuit – Bad bit
Reexamination Certificate
2006-12-05
2006-12-05
Mai, Son L. (Department: 2827)
Static information storage and retrieval
Read/write circuit
Bad bit
C365S189070, C365S201000
Reexamination Certificate
active
07145816
ABSTRACT:
Apparatus and methods are provided. A memory device has a memory array comprising primary and redundant portions. A redundancy circuit is coupled to the memory array and is coupled to receive a command signal. The redundancy circuit is adapted to be selectively programmed for selecting a redundant portion of the memory array for programming extra features in response to the command signal when the redundant memory portion is not used for replacing the primary portion.
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Leffert Jay & Polglaze P.A.
Mai Son L.
Micro)n Technology, Inc.
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