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Method for flattening surface of oxide crystal to ultra high...

Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes joining independent crystals
Reexamination Certificate

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Method for forming a deposited film

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor
Patent

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Method for forming a diamond coated field emitter and device pro

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With a step of measuring – testing – or sensing
Patent

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Method for forming a film by selective area MOCVD growth

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor
Patent

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Method for forming a semiconductor

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor
Patent

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Method for forming a semiconductor device

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor
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Method for forming a semiconductor structure having a...

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state
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Method for forming a single crystal diamond film

Single-crystal – oriented-crystal – and epitaxy growth processes; – Single-crystal of pure or intentionally doped element {c30b 29/0 – Carbon (e.g. – diamond) {c30b 29/04}
Patent

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Method for forming a single crystal semiconductor on a substrate

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state
Patent

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Method for forming a single crystalline film

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor
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Method for forming a solid solution alloy crystal

Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth from liquid or supercritical state – Having pulling during growth
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Method for forming a solid solution alloy crystal

Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth from liquid or supercritical state – Having pulling during growth
Reexamination Certificate

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Method for forming a titanium thin film

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor
Patent

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Method for forming aluminum oxide material used in optical...

Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth from liquid or supercritical state – Having pulling during growth
Reexamination Certificate

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Method for forming an epitaxial silicon-germanium layer

Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth with a subsequent step of heat treating...
Reexamination Certificate

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Method for forming beta-silicon carbide whiskers, singly or in a

Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth from solid or gel state
Patent

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Method for forming boron-doped semiconducting diamond films

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor
Patent

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Method for forming carbon nanotubes with intermediate...

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor
Reexamination Certificate

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Method for forming carbon nanotubes with post-treatment step

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor
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Method for forming crystal

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor
Patent

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