Method for forming a single crystal semiconductor on a substrate

Details Method for forming a single crystal semiconductor on a substrate Method for forming a single crystal semiconductor on a substrate

1996-04-01

1997-09-16

Garrett, Felisa

Single-crystal, oriented-crystal, and epitaxy growth processes;

Forming from vapor or gaseous state

117 90, 117 94, 117104, C30B 2502

Patent

active

056675860

ABSTRACT:
A structure is fabricated comprising a substrate, a dielectric layer formed over the substrate, and a single crystal layer of a compound formed over the dielectric layer. The single crystal layer is formed by the chemical reaction of at least a first element with an initial single crystal layer of a second element on the dielectric layer having an initial thickness of about 100 to about 10,000 angstroms.
According to another aspect, a carbide single crystal layer is provided on a substrate by depositing carbon from a solid carbon source at a low rate and low temperature, followed by reacting the carbon with the underlying layer to convert it to the carbide.

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