Single-crystal – oriented-crystal – and epitaxy growth processes; – Single-crystal of pure or intentionally doped element {c30b 29/0 – Carbon (e.g. – diamond) {c30b 29/04}
Patent
1996-07-16
1998-04-28
King, Roy V.
Single-crystal, oriented-crystal, and epitaxy growth processes;
Single-crystal of pure or intentionally doped element {c30b 29/0
Carbon (e.g., diamond) {c30b 29/04}
427249, 427560, 427533, 427299, C30B 2904, C23C 1626
Patent
active
057439575
ABSTRACT:
A method of forming a single crystal diamond film in which a single crystal diamond film of large area can be formed at low cost, thereby making it possible to realize a large improvement in the properties of the diamond and also making possible the practical use of diamond in a wide range of applications thereof, said method comprising the steps of: first vapor-depositing a platinum film 2 on a first substrate 1, pressing a second substrate 3 onto the platinum film 2, and carrying out annealing in a vacuum. Next the platinum film 2 and the first substrate 1 are mechanically separated from each other, and the join surface 2a of the platinum film that had once been joined to the first substrate 1 is subjected to a surface scratching treatment, after which diamond is formed by gas-phase synthesis on this join face 2a. A single crystal diamond film is obtained in this way. In the case that the vapor-deposited platinum film has a thickness of no less than 20 .mu.m, the platinum film 2 and the first substrate 1 can be mechanically separated from one another without pressing a second substrate 3 onto the platinum film 2, and a single crystal diamond film can be similarly formed by the gas-phase synthesis of diamond on the join face 2a of the platinum film 2 that had once been joined to the first substrate 1.
REFERENCES:
patent: 5298286 (1994-03-01), Yang et al.
patent: 5479875 (1996-01-01), Tachibana et al.
Patent Abstracts of Japan, vol. 18, No. 664 (C-1288)(7004), JP-A-6 263593, Sep. 20, 1994.
Database WPI, Derwent Publications, AN 94-283741/35, JP-A-6 212428, Aug. 2, 1994.
Kabushiki Kaisha Kobe Seiko Sho
King Roy V.
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