Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With a step of measuring – testing – or sensing
Patent
1995-01-30
1996-12-03
Kunemund, Robert
Single-crystal, oriented-crystal, and epitaxy growth processes;
Forming from vapor or gaseous state
With a step of measuring, testing, or sensing
117 95, 117103, 117929, 427577, C30B 2904
Patent
active
055803806
ABSTRACT:
A method for making a field emitter comprising the steps of providing a projection; electrically biasing the projection; and exposing the electrically biased projection to a hydrocarbon containing plasma to form a layer of diamond nuclei on the projection. The diamond nuclei are relatively inert and have a high nucleation density. The projection is preferably a material capable of forming a carbide, such as (111) oriented silicon. Refractory metals may also be used for the projection. The electrical biasing is preferably at a voltage in a range of about -150 to -250 volts. The hydrocarbon containing plasma preferably comprises a plasma including about 2 to 5% by weight of methane in hydrogen. An intervening carbide layer is preferably formed at a surface of the projection and underlying the layer of diamond nuclei. The field emitter produced by the method and having a relatively high diamond nucleation density is also disclosed.
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Glass Jeffrey T.
Hren John J.
Liu Jiang
McClure Michael T.
Stoner Brian R.
Kunemund Robert
North Carolina State University
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