Method for forming a deposited film

Details Method for forming a deposited film Method for forming a deposited film

1995-04-03

1997-01-14

Kunemund, Robert

Single-crystal, oriented-crystal, and epitaxy growth processes;

Forming from vapor or gaseous state

With decomposition of a precursor

117 93, 117 94, 117 97, 117106, 117935, 437246, C30B 2502

Patent

active

055934978

ABSTRACT:
A method for forming a deposited film comprises the step of introducing a starting material (A) which is either one of a gaseous starting material for formation of a deposited film and a gaseous halogenic oxidizing agent having the property of oxidative action on said starting material into a film forming space in which a substrate having a material which becomes crystal neclei for a deposited film to be formed or a material capable of forming crystal nuclei selectively scatteringly on its surface is previously arranged to have said starting material (A) adsorbed onto the surface of said substrate to form an adsorbed layer (I) and the step of introducing a starting material (B) which is the other one into said film forming space, thereby causing surface reaction on said adsorption layer (I) to form a crystalline deposited film (I).

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Gandhi, "VLSI Fabrication Principles, Silicon and Gallium Arsenide" John Wiley and Sons, New York, 1983 pp. 388-392.
Filhy et al, "Single-Crystal Films of Silicon on Insulators", Brit. J. Applied Physics, 1967 vol. 18 pp. 1379,1357.

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