Method for forming a semiconductor device

Details Method for forming a semiconductor device Method for forming a semiconductor device

1994-09-06

1999-08-17

Kunemund, Robert

Single-crystal, oriented-crystal, and epitaxy growth processes;

Forming from vapor or gaseous state

With decomposition of a precursor

117904, 117935, 438333, 438334, 438418, 438419, C30B 2302

Patent

active

059388390

ABSTRACT:
A method for forming a semiconductor device is disclosed. The method comprises the step of irradiating a laser light to a surface of a semiconductor through a mask provided on said surface in an atmosphere comprising an impurity of one conductivity type to diffuse said impurity into a region of said semiconductor.

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