Method for forming crystal

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor

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117 90, 117 95, 117106, 4272553, C30B 2504

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057333696

ABSTRACT:
A method for forming a crystal, which comprises applying a crystal forming treatment on a substrate having a free surface on which a deposition surface (S.sub.NDS) with a small nucleation density and a deposition surface (S.sub.NDL) having a sufficiently small area for crystal growth only from a single nucleus and having a greater nucleation density (ND.sub.L) than the nucleation density (ND.sub.S) of said deposition surface (S.sub.NDS) are arranged adjacent to each other, thereby growing a single crystal from said single nucleus.

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