Method for forming crystal

Details Method for forming crystal Method for forming crystal

1995-06-07

1998-03-31

Kunemund, Robert

Single-crystal, oriented-crystal, and epitaxy growth processes;

Forming from vapor or gaseous state

With decomposition of a precursor

117 90, 117 95, 117106, 4272553, C30B 2504

Patent

active

057333696

ABSTRACT:
A method for forming a crystal, which comprises applying a crystal forming treatment on a substrate having a free surface on which a deposition surface (S.sub.NDS) with a small nucleation density and a deposition surface (S.sub.NDL) having a sufficiently small area for crystal growth only from a single nucleus and having a greater nucleation density (ND.sub.L) than the nucleation density (ND.sub.S) of said deposition surface (S.sub.NDS) are arranged adjacent to each other, thereby growing a single crystal from said single nucleus.

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