Method for forming boron-doped semiconducting diamond films

Details Method for forming boron-doped semiconducting diamond films Method for forming boron-doped semiconducting diamond films

1993-04-16

1994-10-11

Breneman, R. Bruce

Single-crystal, oriented-crystal, and epitaxy growth processes;

Forming from vapor or gaseous state

With decomposition of a precursor

117 84, C30B 2904

Patent

active

053537378

ABSTRACT:
Disclosed is a method for forming a diamond film on a substrate by vapor-phase synthesis using a reaction gas which contains B.sub.2 H.sub.6 and O.sub.2 with a gas concentration ratio (volume %) of ([B.sub.2 H.sub.6 ]/[O.sub.2 ]).gtoreq.1.times.10.sup.-4 in addition to a hydrocarbon gas in hydrogen. By this invention, it is possible to form p-type semiconducting diamond films having an excellent crystallinity and desired electric characteristics.

REFERENCES:
patent: 4486286 (1984-12-01), Lewin et al.
patent: 5086014 (1992-02-01), Miyata et al.
Japanese Journal of Applied Physics, vol. 26, No. 9, Sep. 1987, pp. 1429-1432, T. Kawato et al., "Effects of Oxygen on CVD Diamond Synthesis".
WPI Abstract Accession No. 92-110419/14, JP 4053173, Feb. 20, 1992.

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