Method for forming a film by selective area MOCVD growth

Details Method for forming a film by selective area MOCVD growth Method for forming a film by selective area MOCVD growth

1995-11-14

1998-03-17

Garrett, Felisa

Single-crystal, oriented-crystal, and epitaxy growth processes;

Forming from vapor or gaseous state

With decomposition of a precursor

127 95, 127 97, C30B 2504

Patent

active

057282153

ABSTRACT:
A method for forming a film by selective area growth by MDCVD technique includes forming a mask on a semiconductor substrate having a (100) plane, the mask having a mask opening to selectively growing a compound semiconductor layer, and a slit which is narrower than the mask opening in width and controls the growth rate of the compound semiconductor layer at the mask opening; and selectively growing the compound semiconductor layer at a growth rate which is on the mask in the mask opening and the slit.

REFERENCES:
patent: 4632723 (1986-12-01), Smith et al.
patent: 5436192 (1995-07-01), Epler et al.
patent: 5452383 (1995-09-01), Takiguchi
patent: 5561079 (1996-10-01), Partin
Von mark A. Reed, "Mit extrem miniaturisierten, nur millionstel Millimeter kleinen Halbleiter-Strukturen vermag die Nanotechnik heute sogar einzelne Elektronen punktgenau zu fixieren.".
Spektrun der Wissenschaft, Mar. 1993, pp. 52-57.
Bailey et al., "Effect of Crystal Orientation on Anisoytropic Etching and MOCVD Growth of Grooves on GaAs", J. Electrochem. Soc., vol. 136, No. 11, Nov. 1989, pp. 3444-3449.

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