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Growth of epitaxial semiconductor material with improved...

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor
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Growth of oriented crystals at polymerized membranes

Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth from liquid or supercritical state – Having growth from a solution comprising a solvent which is...
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Growth of semiconductor single crystals

Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth from liquid or supercritical state – Having pulling during growth
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Growth of silicon crystal from melt having extraordinary eddy fl

Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth from liquid or supercritical state – Having pulling during growth
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Growth of silicon single crystal

Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth from liquid or supercritical state – Having pulling during growth
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Growth of silicon single crystal having uniform impurity distrib

Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth from liquid or supercritical state – Having pulling during growth
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Growth of textured gallium nitride thin films and nanowires...

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor
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Growth of textured gallium nitride thin films on...

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor
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Growth of ultra-high purity silicon carbide crystals in an...

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – Fully-sealed or vacuum-maintained chamber
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Growth of uniform crystals

Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth from liquid or supercritical state – Havin growth from molten state
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Growth of very uniform silicon carbide epitaxial layers

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor
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Halide dopant process for producing semi-insulating group III-V

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state
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Hazardous containment for MBE maintenance

Single-crystal – oriented-crystal – and epitaxy growth processes; – Apparatus
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Heat shield and crystal growth equipment

Single-crystal – oriented-crystal – and epitaxy growth processes; – Apparatus – For crystallization from liquid or supercritical state
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Heat shield assembly and method of growing vacancy rich single c

Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth from liquid or supercritical state – Having pulling during growth
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Heat shield assembly for a crystal puller

Single-crystal – oriented-crystal – and epitaxy growth processes; – Apparatus – For crystallization from liquid or supercritical state
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Heat shield assembly for crystal puller

Single-crystal – oriented-crystal – and epitaxy growth processes; – Apparatus – For crystallization from liquid or supercritical state
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Heat shield assembly for crystal puller

Single-crystal – oriented-crystal – and epitaxy growth processes; – Apparatus – For crystallization from liquid or supercritical state
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Heat shield assembly for crystal pulling apparatus

Single-crystal – oriented-crystal – and epitaxy growth processes; – Apparatus – For crystallization from liquid or supercritical state
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Heat shield for crystal puller

Single-crystal – oriented-crystal – and epitaxy growth processes; – Apparatus – For crystallization from liquid or supercritical state
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