Growth of silicon single crystal having uniform impurity distrib

Details Growth of silicon single crystal having uniform impurity distrib Growth of silicon single crystal having uniform impurity distrib

1996-03-22

1997-12-23

Garrett, Felisa

Single-crystal, oriented-crystal, and epitaxy growth processes;

Processes of growth from liquid or supercritical state

Having pulling during growth

117 15, C30B 1504

Patent

active

057003203

ABSTRACT:
When a B or P-doped Si single crystal is pulled up from a B or P-doped melt by the Czochralski method, an element such as Ga, Sb or In having the effect to reduce the heat expansion coefficient of said melt at a temperature near the melting point is added to said melt. The additive element stabilizes the temperature condition of crystal growth so as to control the generation of eddy flows just below the interface of crystal growth.
When a Ga or Sb-doped Si single crystal is pulled up from a Ga or Sb-doped melt, an element such as B or P having the effect to increase the heat expansion coefficient of said melt at a temperature near the melting point is added. The agitation of the melt just below the interface of crystal growth is accelerated by the addition of B or P, so as to assure the growth of a Si single crystal from the melt having impurity distribution made uniform along the radial direction.
Accordingly, a Si single crystal is formed having a uniform impurity distribution along its lengthwise or radial direction.

REFERENCES:
patent: 4059461 (1977-11-01), Fan et al.
patent: 5392729 (1995-02-01), Kuramochi et al.
patent: 5423283 (1995-06-01), Seki

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