Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth from liquid or supercritical state – Having pulling during growth
Patent
1996-03-22
1997-11-04
Garrett, Felisa
Single-crystal, oriented-crystal, and epitaxy growth processes;
Processes of growth from liquid or supercritical state
Having pulling during growth
117 14, 117 15, 117 30, 117901, C30B 1520
Patent
active
056835043
ABSTRACT:
When a single crystal is pulled up from a melt, the difference .DELTA.T between temperatures at the bottom of a crucible and at the interface of crystal growth is controlled so as to hold the Rayleigh constant defined by the formula of:
REFERENCES:
patent: 4971652 (1990-11-01), Azad
patent: 5162072 (1992-11-01), Azad
Ikari Atsushi
Izunome Koji
Kawanishi Souroku
Kimura Shigeyuki
Sasaki Hitoshi
Garrett Felisa
Komatsu Electronic Metals Co. Ltd.
Mitsubishi Materials Corporation
Nippon Steel Corporation
Research Development Corporation of Japan
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