Growth of silicon single crystal

Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth from liquid or supercritical state – Having pulling during growth

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117 14, 117 15, 117 30, 117901, C30B 1520

Patent

active

056835043

ABSTRACT:
When a single crystal is pulled up from a melt, the difference .DELTA.T between temperatures at the bottom of a crucible and at the interface of crystal growth is controlled so as to hold the Rayleigh constant defined by the formula of:

REFERENCES:
patent: 4971652 (1990-11-01), Azad
patent: 5162072 (1992-11-01), Azad

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