Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state
Patent
1995-03-24
1997-08-12
Kunemund, Robert
Single-crystal, oriented-crystal, and epitaxy growth processes;
Forming from vapor or gaseous state
148DIG3, 148DIG64, 117953, 117 88, 117108, 438918, H01L 2120
Patent
active
056565380
ABSTRACT:
A process for growing semi-insulating layers of indium phosphide and other group III-V materials through the use of halide dopant or etchant introduction during growth. Gas phase epitaxial growth techniques are utilized at low temperatures to produce indium phosphide layers having a resistivity greater than approximately 10.sup.7 ohm-cm. According to the preferred embodiment carbon tetrachloride is used as a dopant at flow rates above 5 sccm to grow the layers with substrate growth temperatures ranging from approximately 460.degree. C. to 525.degree. C. This temperature range provides an advantage over the transition metal techniques for doping indium phosphide since the high temperatures generally required for those techniques limit the ability to control growth. Good surface morphology is also obtained through the growth according to the present invention. The process may be used to form many types of group III-V semiconductor devices.
REFERENCES:
patent: 4190470 (1980-02-01), Walline
patent: 4488914 (1984-12-01), Quinlan et al.
patent: 4738934 (1988-04-01), Johnston, Jr. et al.
patent: 4782034 (1988-11-01), Dentai et al.
patent: 4830982 (1989-05-01), Dentai et al.
patent: 4849373 (1989-07-01), Knight et al.
patent: 5045496 (1991-09-01), Hess et al.
patent: 5137847 (1992-08-01), Shimakura et al.
patent: 5215938 (1993-06-01), Arroyo
patent: 5244829 (1993-09-01), Kim
patent: 5306662 (1994-04-01), Nakamura et al.
B.T. Cunningham, J.E. Baker, S.A. Stockman, and G.E. Stillman, Absence of .sup.13 C Incorporation in .sup.13 CC1.sub.4 -doped InP grown by Metalorganic Chemical Vapor Deposition, Apr. 3, 1990, Appl. Phys. Lett. 56(18), pp. 1760-1762.
B.T. Cunningham, J.E. Baker, and G.E. Stillman, Carbon Tetrachloride Doped Al.sub.x Ga.sub.1-x As Grown by Metalorganic Chemical Vapor Deposition, Feb. 26, 1990, Appl. Phys. Lett. 65(9), pp. 836-838.
W.M. Chen, P. Dreszer, A. Prasad, A. Kurpiewski, W. Walukiewicz, E.R. Weber, E. Sorman, B. Monemar, B.W. Liang, and C.W. Tu, Origin of n-type conductivity of low-temperature grown InP, Mar. 13, 1994, Journal of Applied Physics, vol. 76, pp. 600-602.
Gardner et al., "Semi-insulating InP Grown at Low Temperature By Metalorganic Chemical Vapor Deposition", Applied Physics Letters, vol. 65 (3), Jul. 18, 1994 pp. 359 to 361.
Gardner Nathan F.
Hartmann Quesnell J.
Stillman Gregory E.
Stockman Stephen A.
Kunemund Robert
The Board of Trustees of the University of Illinois
LandOfFree
Halide dopant process for producing semi-insulating group III-V does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Halide dopant process for producing semi-insulating group III-V , we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Halide dopant process for producing semi-insulating group III-V will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-160024