Growth of uniform crystals

Details Growth of uniform crystals Growth of uniform crystals

2005-02-01

2005-02-01

Norton, Nadine G. (Department: 1765)

Single-crystal, oriented-crystal, and epitaxy growth processes;

Processes of growth from liquid or supercritical state

Havin growth from molten state

Reexamination Certificate

active

06849121

ABSTRACT:
The invention provides for growing semiconductor and other crystals by loading a vessel in its lower portion with a seed crystal, loading a charge thereon in the vessel, heating the charge to a molten state and electromagnetically stirring the melt using magnetic and electric fields to obtain a more uniform composition of melt and slowly reducing the temperature of the melt over the crystal to grow a more uniform crystal from such stirred melt.

REFERENCES:
patent: 5253696 (1993-10-01), Misra
Hurle, ed., Handbook of Crystal Growth 2 Bulk Crystal Growth Part A: Basic Techniques, North-Holland, Amsterdam,Chapter 5, pp. 261-285, 1994.*
Kim, Suppression of Thermal Convection by Transverse Magnetic Field, Journal of Electrochemical Society, 129 (1982), pp. 427-429 □ □.*
Sen et al., Influence of Magnetic Field on Vertical Bridgman-Stockbarger Growth of InGaSb, Journal of Crystal Growth, 43 (1978), pp. 526-530 □ □.*
Matthiesen, et al., Dopant Segregation during Vertical Bridgman-Stockbarger Growth with Melt Stabilization by Strong Axial Magnetic Fields, Journal of Crystal Growth, 85 (1987), pp. 557-560.

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