Heat shield assembly and method of growing vacancy rich single c

Details Heat shield assembly and method of growing vacancy rich single c Heat shield assembly and method of growing vacancy rich single c

1997-08-01

1999-08-24

Kunemund, Robert

Single-crystal, oriented-crystal, and epitaxy growth processes;

Processes of growth from liquid or supercritical state

Having pulling during growth

117 30, 117 35, 117208, 117217, C30B 1514

Patent

active

059420324

ABSTRACT:
A heat shield assembly is used in a Czochralski crystal puller for selectively shielding a monocrystalline ingot of semiconductor material to control the type and number density of agglomerated defects in the crystal structure of the ingot. The heat shield assembly has an upper heat shield connected to a lower heat shield. The upper and lower heat shields are connected to each other and slidingly connected to an intermediate heat shield. The lower heat shield is able to telescope up into the intermediate heat shield to minimize the profile of the heat shield assembly located within a crystal growth chamber of the crystal puller. However when needed to control formation of the monocrystalline ingot, the lower heat shield may be extended from the intermediate heat shield and project downwardly into the crystal puller crucible in close proximity to an upper surface of molten semiconductor source material in the crucible. A method employing the heat shield assembly is also disclosed.

REFERENCES:
patent: 3798007 (1974-03-01), Bochman et al.
patent: 4330361 (1982-05-01), Kuhn-Kuhnenfeld et al.
patent: 4330362 (1982-05-01), Zulehner
patent: 4956153 (1990-09-01), Yamagishi et al.
patent: 4981549 (1991-01-01), Yamagishi et al.
patent: 5004519 (1991-04-01), Hariri
patent: 5009862 (1991-04-01), Kida et al.
patent: 5009863 (1991-04-01), Shima et al.
patent: 5196173 (1993-03-01), Arai et al.
patent: 5292487 (1994-03-01), Tatsumi et al.
patent: 5361721 (1994-11-01), Takano et al.
patent: 5373805 (1994-12-01), Takano et al.
patent: 5443034 (1995-08-01), Everts
patent: 5450814 (1995-09-01), Shiraishi et al.
patent: 5476065 (1995-12-01), Ikezawa et al.
patent: 5567399 (1996-10-01), Von Ammon et al.
patent: 5575847 (1996-11-01), Kuramochi et al.
patent: 5683505 (1997-11-01), Kuramochi et al.
Abstract of Japanese Patent 06293589-A from "Semiconductor Materials & Processes", p. 2 (9501-9504).
Abstract of Japanese Patent 06305878-A from "Semiconductor Materials & Processes", p. 6 (9501-9504).
International Search Report.

Affiliated with

Also associated with

Rating

Heat shield assembly and method of growing vacancy rich single c does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Heat shield assembly and method of growing vacancy rich single c, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Heat shield assembly and method of growing vacancy rich single c will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-463054