Heat shield and crystal growth equipment

Details Heat shield and crystal growth equipment Heat shield and crystal growth equipment

2007-11-06

2007-11-06

Hiteshew, Felisa (Department: 1722)

Single-crystal, oriented-crystal, and epitaxy growth processes;

Apparatus

For crystallization from liquid or supercritical state

C117S218000, C117S219000, C117S222000

Reexamination Certificate

active

11163855

ABSTRACT:
A heat shield and a crystal growth equipment are provided, in which the length-adjustable and hybrid-angle heat shield is provided for the crystal growth equipments. The heat shield is adapted for not only guiding the inert gas flow but also speeding up the flow rate of the gas and the cooling rate of the crystal so as to raise the axial temperature gradient at the solid-molten interface, the growth rate of the crystal and the productivity. The heat shield further can also reduce the possibility of microdefect nucleation to improve the quality of crystal at the same time. In addition, the length of heat shield can be adjusted according to the distance between the heat shield and the semiconductor material melt in different crucibles in case that the crucibles are made by different factories. This can reduce the cost of the heat shield manufacturing.

REFERENCES:
patent: 5476065 (1995-12-01), Ikezawa et al.
patent: 5951753 (1999-09-01), Dornberger et al.
patent: 5997635 (1999-12-01), Kubota et al.
patent: 6569237 (2003-05-01), Tanaka et al.
patent: 6676753 (2004-01-01), Park

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