LandOfFree - US Patents - Listing for Single-crystal, oriented-crystal, and epitaxy growth processes;

Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth from liquid or supercritical state – Having pulling during growth

Twin-free crystal growth of III-V semiconductor material

Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth from liquid or supercritical state – Having pulling during growth

Two camera diameter control system with diameter tracking for si

Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth from liquid or supercritical state – Having growth from a solution comprising a solvent which is...

Two-step dipping technique for the preparation of organic-inorga

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state

Ultra-high vacuum/chemical vapor deposition of epitaxial silicon

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor

Ultra-low pressure metal-organic vapor phase epitaxy (MOVPE) met

Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth from solid or gel state – Organic product

Ultrafine particles and production method thereof

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor

Ultraviolet light-emitting device in which p-type...

Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth from solid or gel state – Using heat

Uniaxial thin film structures formed from oriented bilayers and

Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth from solid or gel state

Use of thin SOI to inhibit relaxation of SiGe layers

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor

Utilization of miscut substrates to improve relaxed graded silic

Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth with a subsequent step of heat treating...

Vacancy, dominsated, defect-free silicon

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor

Vapor assisted growth of gallium nitride

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor

Vapor deposition method

Single-crystal – oriented-crystal – and epitaxy growth processes; – Apparatus – For crystallization from liquid or supercritical state

Vapor equilibration tray for growing protein crystals

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor

Vapor phase epitaxial growth method of a compound semiconductor

Single-crystal – oriented-crystal – and epitaxy growth processes; – Apparatus

Vapor phase growth apparatus and vapor phase growth method

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor

Vapor phase growth method of oxide dielectric film

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state

Vapor-phase epitaxial apparatus and vapor phase epitaxial...

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor

Vapor-phase epitaxial growth method and vapor-phase epitaxy...