Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth from liquid or supercritical state – Having pulling during growth
Patent
1998-01-12
2000-02-29
Garrett, Felisa
Single-crystal, oriented-crystal, and epitaxy growth processes;
Processes of growth from liquid or supercritical state
Having pulling during growth
117201, 117202, C30B 1522
Patent
active
060304510
ABSTRACT:
A method and apparatus for measuring and controlling the diameter of a silicon single crystal ingot grown by the Czochralski technique using dual optical cameras focused on diametrically opposed edges of the meniscus of the growing crystal to measure the actual crystal diameter. The crystal growth parameters can be adjusted in response to the measured diameter to maintain a constant, desired diameter. The method and apparatus of the invention provide a continuous accurate measurement of the crystal diameter and avoid unnecessary adjustments to the crystal growth conditions resulting from diameter measurement errors due to the effects of crystal orbit, melt level changes and camera angle variations.
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Baba Masahiko
LaBrie Aaron
Garrett Felisa
SEH America Inc.
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