Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state
Patent
1994-05-03
1995-04-04
Breneman, R. Bruce
Single-crystal, oriented-crystal, and epitaxy growth processes;
Forming from vapor or gaseous state
437 84, 437106, 437126, H01L 2120
Patent
active
054027497
ABSTRACT:
A method of fabricating epitaxial thin films, such as doped films or silicon-on-sapphire films, relies upon ultrahigh vacuum vapor deposition. The method calls for a preparing of an ultrahigh vacuum chamber to reduce water and oxygen pressure to below 10.sup.-10 Torr. At at least one sapphire substrate is placed in the ultrahigh vacuum chamber and is purged in the chamber with about 600 sccm hydrogen for about 5 minutes. A silicon film or a doped film is deposited on the sapphire substrate at temperatures between about 700 and 850.degree. C. with base pressures between about 1.0 and 2.0.mu. and gas flow rates of about 2.0 sccm SiH.sub.4 and 20 sccm H.sub.2 for about 30 minutes to provide an about 1000 .ANG. thick silicon film, or, doped film, on the sapphire substrate.
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Sexton Douglas A.
Walker Howard W.
Breneman R. Bruce
Fendelman Harvey
Keough Thomas Glenn
Paladugu Ramamohan Rao
The United States of America as represented by the Secretary of
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