Vapor deposition method

Details Vapor deposition method Vapor deposition method

1997-05-21

1998-10-20

Kunemund, Robert

Single-crystal, oriented-crystal, and epitaxy growth processes;

Forming from vapor or gaseous state

With decomposition of a precursor

117 88, 117 92, 117953, 117105, 117954, 117 84, 438442, 438680, C30B 2300, C30B 2500

Patent

active

058241515

ABSTRACT:
The method of forming a III-V group compound semiconductor crystalline layer on a semiconductor crystal containing at least V-group compound, includes the steps of: performing the crystal growth of the III-V compound semiconductor crystalline layer; and supplying an n-type dopant and a material compound containing a V-group element onto the semiconductor crystal without causing the crystal growth of the III-V compound semiconductor crystalline layer.

REFERENCES:
patent: 4190470 (1980-02-01), Walline
patent: 5036022 (1991-07-01), Kvech
patent: 5168077 (1992-12-01), Ashizawa

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